New Industry Products

International Rectifier Announces 1,000V Power MOSFET, the IRHY7G30CMSE

February 11, 2001 by Jeff Shepard

International Rectifier (IR, El Segundo, CA) announced a 1,000V radiation-hardened (rad-hard) power MOSFET. IR claims that the IRHY7G30CMSE rad-hard power MOSFET improves power management circuits and high-frequency switching systems in satellite communications systems by minimizing component count. Typical applications include traveling wave tube amplifiers, which are used to amplify microwave signals in satellite communications systems.

The new IRHY7G30CMSE 1,000V rad-hard MOSFET is an enhancement-mode N-channel device, made with IR's proprietary radiation-hardened gate- and field-oxidation process to achieve stringent single-event upset and total ionizing dose hardness requirements. The device is single event effect hardened with linear energy transfer of 37 MeV/(mg/cm2). The device retains virtually identical electrical performance up to 100 Krads (Si) total dose.

According to Richard Southwell, IR's hi-rel components group marketing manager, "IR's new 1,000V device is a major breakthrough, since the highest voltage-rated rad-hard MOSFET previously available is a 600V device. Now designers can accommodate safe de-rating conditions and still not lose functionality and practicality in their designs. In high-voltage applications, the 1,000V device can replace less-efficient bipolar transistors."

The product is available now in standard JEDEC Solid State Technology Association TO-205AF (TO-39), TO-254AA and TO-257AA packages as well as customer-specified packages. Pricing for the IRHY7G30CMSE 1,000V rad-hard power MOSFET begins at $195 each in 500-unit quantities.