New Products
November 3, 2008
Toshiba Announces Five New 30V Single Die MOSFET & Schottky Barrier Diode Devices
Toshiba America Electronic Components, Inc. (TAEC) announced that it has expanded its lineup of high-efficiency MOSBD devices, which are also known in the industry as "FETKEYs." The company states that the devices integrate a power MOSFET and a Schottky Barrier Diode onto a single die to save board space, increase power efficiency and reduce wiring resistance and inductance by eliminating external wiring between the MOSFET and the diode. The five new MOSBDs, developed by Toshiba Corp., expand the selection of available packages, as well as a range of drain current and on-state resistance (R(DS(ON))) ratings.
The five new devices, TPC8A04-H, TPC8A05-H, TPCA8A04-H, TPCA8A05-H and TPCM8A05-H are targeted for dc-dc converter applications in notebook PCs, portable devices and other electronics that require efficient power management. These MOSBDs are based on UMOS V-H, the fifth-generation process technology in the Toshiba fast switching series, which enables a lower figure of merit, R(DS(ON)) x Q(gd) (1). Each of the MOSBDs utilizes Aluminum Strap (Al-Strap) connections instead of conventional wire bond technology to further reduce R(DS(ON)).
"These additional UMOS V-H MOSBDs, or "FETKEYs", which integrate a MOSFET and Schottky Barrier Diode into a single die to improve electrical characteristics, demonstrate how Toshiba continues to look for innovative integration of power devices and packaging designs to support our customers’ efforts to reduce circuit board size," said Jeff Lo, Business Development Manager, Discrete Power Devices, for TAEC. "The five new FETKEYs provide a broader selection of drain current, R(DS(ON)) and packages to meet a range of system design requirements."
All five devices feature 30V drain source voltage (max.) Two of the devices, the TPC8A04-H and TPC8A05-H, are offered in SOP-8 packaging, which measures 5 x 6 x 1.6mm. The TPC8A04-H has a drain current rating of 18A (max.) and R(DS(ON)) of 2.6mΩ (typ.) (2), while the TPC8A05-H has a drain current rating of 10A (max.) and R(DS(ON)) of 9.5mΩ (typ.)(2).
The TPCA8A04-H and TPCA8A05-H are offered in low-profile SOP Advance packaging from Toshiba, which measures 5 x 6 x 0.95mm. The TPCA8A04-H has a drain current rating of 42A (max.) and R(DS(ON)) of 2.3 milliohm (typ.) (2), and the TPCA8A05-H has drain current of 20A (max.) and R(DS(ON)) of 9.2 milliohm (typ.) (2). The fifth device, TPCM8A05-H, is offered in compact TSSOP Advance packaging, which measures 3.5 x 4.65 x 0.75mm. The device has a drain current rating of 20A (max.) with R(DS(ON)) of 9.2mΩ (typ.) (2).
Samples of the Toshiba TPC8A04-H, TPC8A05-H, TPCA8A04-H, TPCA8A05-H and TPCM8A05-H high-efficiency UMOS V-H MOSBD are available now, with prices in sample quantities starting at $0.86.
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Primitive batteries capable of producing ½ volt of electricity were made in Mesopotamia between around 200 B.C. and 200 A.D. They were used mainly for electroplating silver onto copper.