New Industry Products

Toshiba Adds Small Signal P-Channel MOSFETs for Load Switching in Mobile Handsets & Portable Electronics

November 09, 2009 by Jeff Shepard

Toshiba America Electronic Components, Inc. (TAEC) has expanded its lineup of P-channel power MOSFETs for load switching with a next-generation selection of low voltage, 1.5V operation devices with lower On-Resistance (RDS(ON)) for applications with current ranging from 1.0 to 5.0A. Typical applications are mobile handsets, digital cameras, portable audio players and other portable electronic devices.

The new lineup includes five high speed switching power MOSFETs with -20V drain source voltage (VDSS) to provide designers with a choice of On-Resistance (RDS(ON)), input capacitance, and packaging. The family is offered three different small thin packages: 3-pin TSM (2.9 x 2.8 x 0.7mm), 6-pin UF6 (2.0 x 2.1 x 0.7mm), and 3-pin UFM (2.0 x 2.1 x 0.7mm).

"As system power supplies for mobile handset components such as baseband ICs move toward lower voltage and power, there is an increasing need for low RDS(ON) MOSFETs," said Talayeh Saderi, Business Development Engineer, RF and Small Signal Devices, for TAEC.

New devices in TSM packages include the SSM3J307T, which features RDS(ON) of 83mΩ (max.) at VGS = -1.5V or 40mΩ at -2.5V, with input capacitance of 1170 pF1; and the SSM3J321T with RDS(ON) of 137mΩ (max.) at VGS = -1.5V and 62mΩ at -2.5V, with input capacitance of 640 pF1. For comparison, the previous generation SSM3J13T, a -12VDSS device, features RDS(ON) of 95mohm (max.) at VGS = -2.5V, with input capacitance of 890pF1.

Another new MOSFET in UF6 packaging, the SSM6J409TU, features RDS(ON) of 72.3 mΩ (max.) at VGS = -1.5V and 30.2mΩ at -2.5V, with input capacitance of 1100 pF1. Its predecessor, the SSM6J51TU, features RDS(ON) of 150mΩ (max.) at VGS = -1.5V, and input capacitance of 1700 pF1.

Two new MOSFETs in UFM packaging are the SSM3J130TU, a -20VDSS device with RDS(ON) of 63.2 mΩ (max.) at VGS = -1.5V and 41.1mΩ at -2.5V, with input capacitance of 1800 pF1 and the SSM3J129TU, a -20VDSS device with RDS(ON) of 137mΩ (max.) at VGS = -1.5V and 80mΩ at -2.5V, with input capacitance of 640 pF1. For comparison, the previous generation SSM3J120TU features RDS(ON) of 140mΩ (max.) at VGS = -1.5V and input capacitance of 1484 pF1.

Samples of all the devices described above are available now, and mass production is ramping. Prices begin at $0.12, in sample quantities.