New Products
December 15, 2009
ON Semi Launches Automotive-Qualified Self Protected Low-Side MOSFET Driver ICs
ON Semiconductor introduced a family of low-side protected MOSFETs that feature high levels of integrated protection. Qualified in accordance with the AEC-Q101 standard, devices in the NCV840x family are well suited for use in switching applications operating in harsh automotive and industrial environments.
Designed for robust and reliable operation, the NCV8401, NCV8402, NCV8402D (dual die), NCV8403 and NCV8405 all have an extensive range of self-protection features. These include temperature and current limiting, electrostatic discharge (ESD) protection, and integrated drain-to-gate clamping for overvoltage protection.
"With the amount of electronic content in vehicles continuing to increase, there is a need to offer semiconductor solutions that can help reduce component count and save valuable space," said Jim Alvernaz, Director of Automotive Power products at ON Semiconductor. "The NCV840x family will help designers to achieve this while delivering system designs that are rugged enough to cope with harsh automotive environments."
NCV840x drivers can be used to switch a variety of resistive, inductive and capacitive loads and allow design engineers to replace electromechanical relays or discrete circuits with an alternative that is more compact and robust and that has a longer operational life. All of the devices have a logic level input.
The NCV8401, NCV8402/D and NCV8403 have a drain-to-source voltage rating (VDSS) of 42V and maximum drain currents (ID) of 33, 2 and 15A respectively. The NCV8405 is rated to 40 VDSS and has a maximum ID rating of 6A. Gate-to-source voltage for all devices is ±14V.
All members of the new family exhibit low on resistance (RDS(ON)) values that enable more energy efficient system designs. Respective RDS(ON) values (at 10V) are 23mΩ for the NCV8401; 165mΩ for the NCV8402/D; 53mΩ for the NCV8403; and 90mΩ for the NCV8405.
The devices all have a wide operating temperature range of 40 to 150°C and high electro-static resistance levels (4000V at a junction temperature of 25°C). Turn-off temperature limit is set at 175°C when VGS is 5V and 165°C when VGS is 10V.
The NCV840x devices are available in a Pb-free SOT-223, DPak and SOIC8 packaging. The NCV840x devices are priced between $0.25 to $0.58 USD per unit in 1,000 unit quantities.
Share this story
Send via E-mail
Post to Twitter
Share on Facebook
On the Web:
- GaN + Smart Grid + Energy Harvesting + Digital Power = Darnell Power Forum
- SMA Solar Sales in First Half of 2010 Almost as High as Whole of 2009
- Dongbu HiTek Targets European Semiconductor Market
- EU OKs Emerson Takeover Bid of Chloride
- Astronergy & Bosch Announce Major Solar Expansions
- Saft Unveiling Li-ion battery Technology for Marine Propulsion & Auxiliary Systems
- Flextronics Opens Power Facility in Ganzhou, Jiangxi China
- IXYS Releases MOSFET Solution with Silicon Carbide Technology in Isolated Integrated Package
- Semiconductor Circuits Inc. Releases 5V, 8A (40W) 4:1 Input 16th Brick DC-DC Converter
- Americans Using Less Energy, More Renewables
- Murata Releases Power Supply for LED Lamps
- Oltronics Offers 450W AC-DC Power Supplies for Free
- European Commission To Require Uniform Cell Phone Chargers By 2011
- Saft & Acciona Energia Join Forces to Offer Stability, Power Management & Grid Connection for PV Plant in Spain
- Phihong Adds LED Drivers to Power Supply Product Offering
- Martek Power Moves Into Laser and Lighting Power Supply Market with Acquisition of Laser Drive
- N2Power Announces 275W DC-DC Power Supply Family
- Deere Reaches Agreement for Sale of Wind Energy Business
- SL Industries Announces Financial Results for First Quarter
- Tectrol Releases 1200W 12V Front End for Datacom & Storage Applications
Conferences and Forums
.gif)
.gif)
Subscribe to the PowerPulse Newsletter
Did You Know?
Primitive batteries capable of producing ½ volt of electricity were made in Mesopotamia between around 200 B.C. and 200 A.D. They were used mainly for electroplating silver onto copper.