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April 27, 2012

Infineon Introduces Superjunction 500V CoolMOS CE Products for Consumer and Lighting Applications

Infineon Technologies introduced the 500V CoolMOS™ CE, a new series of CoolMOS products. When used to design power supplies in price sensitive applications such as consumer electronics, PC Silverboxes and Lighting SMPS (Switched-Mode Power Supply), the new devices represent an attractive alternative to standard MOSFETs. Infineon’s 500V CoolMOS CE combines all benefits of modern Superjunction MOSFETs: low area specific on-state resistance, reduced switching losses and high body diode ruggedness.

"Leading performance, field proven reliability and consistent supply capability created customer confidence in high quality and continued innovation underlying CoolMOS technology," says Jan-Willem Reynaerts, Product Segment Head of High Voltage Power Conversion at Infineon Technologies. "The new 500V portfolio enables our customers to reach higher energy efficiency levels while at the same time offering a very attractive price-performance ratio, which makes this new set of CoolMOS CE devices an excellent alternative to standard MOSFETs in targeted applications."

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Using Superjunction technology provides improved efficiency especially at light load conditions – thus, this new series of CoolMOS CE represents an energy-efficient and cost attractive alternative to standard MOSFETs. The low area specific on-state resistance (R DS(on)A) enables lower conduction losses, reduces energy stored in output capacitance (E oss) and minimizes switching losses. Lower gate charge (Q g) improves light load efficiency while not compromising full load efficiency. This, combined with the outstanding quality and reliability of CoolMOS technology, provides lower system cost and a reduced cost of ownership. High body diode ruggedness and reduced reverse recovery charge (Q rr) make it the perfect solution for soft switching applications. The new devices are easy to design in and to use given their nicely controllable switching behavior.

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First samples of 500V CoolMOS CE in 280mOhm and 500mΩ R ds(on) in TO-220 package are available. By May 2012, first samples of 500V devices in 280mOhm, 500mΩ and 950mΩ R ds(on) in DPAK and TO-220 FullPAK packages will be available. First OEM ramp-ups are expected in May 2012.

Engineering sample is US $1.12 per piece (IPP50R280CE; 500V, 280mΩ in TO-220).

Opinion: Maximising Synergies between Power Electronics and ICT for improving Energy Efficiency

More news and information regarding the latest developments in Smart Grid electronics can be found at Darnell’s SmartGridElectronics.Net.

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