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New Products
September 4, 2012
High-Safety for eGaN FETs from EPC
Efficient Power Conversion Corporation (EPC) is releasing safe operating area (SOA) data for their entire product line of eGaN FETs. The positive temperature coefficient across virtually their entire operating range allows a square SOA limited only by average device temperature.
SOA is an indicator of the device's ability to transfer heat away from a resistive junction. The more efficient a device is at getting rid of generated heat, the lower thermal resistance and the better the SOA performance.
EPC's eGaN FETs have many major advantages over the power MOSFET needed for today's high performance applications. eGaN FETs offer superior device on-resistance while its positive temperature coefficients inhibit hot spot generation within the die, resulting in superior Safe Operating Area capabilities.
An application note presenting the Safe Operating Area for EPC eGaN FETs is available at: http://epc-co.com/epc/documents/product-training/SafeOperatingArea.pdf
Additionally, EPC is in the process of updating each of its product data sheets to include SOA performance curves.
Opinion: Unraveling the Ultra-Low Power Design Issues
Additional application and design information for EPC eGaN FETs is available:
Applications Support:
http://epc-co.com/epc/DesignSupportbr/Applications/DesignBasics.aspx
Products:
http://epc-co.com/epc/Products/eGaNFETs.aspx
Reliability:
http://epc-co.com/epc/DesignSupportbr/eGaNFETReliability.aspx
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