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October 29, 2012

Telefunken Offers 750V High Voltage BCD Process

Telefunken Semiconductors International, LLC announced that TS750V, a state of the art sub-micron BCD technology featuring 750V power NMOS, is available as the latest technology by Telefunken in both its 8" Fab in Roseville, California, USA and its 6" Fab in Heilbronn, Germany.

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The unique combination of sub-micron CMOS with high voltage power electronics, and a dual metal layer option enables a new level of integration. The process offers a competitive on-resistance area product (RDSon x A) and full isolation option enabling cost effective integration of smart power devices.

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"This technology is ideal for applications such as off-line switching AC/DC converters, LED lighting, Gate Drivers and Industrial Motor Control," said Mr. Roger Lee, CEO and President of Telefunken Semiconductors. "Our TS750V environment (PDK) provides design engineers with the ability to accelerate time to market for highly integrated, low cost, energy efficient solutions for today's most power sensitive applications. A feature-rich device portfolio equips design engineers to optimize trade-offs when attempting to achieve stringent regulatory requirements such as Energy Star and Blue Angel."

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TS 750 V PDK is now available with appropriate NDA and is already used by Telefunken customers for designing products on this TF Technology.

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