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February 26, 2013
Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers
Texas Instruments Incorporated (TI) today introduced the industry’s first 35-V, single-channel, output stage power management gate drivers for insulated-gate bipolar transistors (IGBTs) and silicon-carbide (SiC) FETs. TI’s new UCC27531 and UCC27532 output stage gate drivers with split output provide the most efficient output drive capability, shortest propagation delay and increased system protection for isolated power designs, such as solar dc-ac inverters, uninterruptible power supplies and electric vehicle charging.
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Today’s renewable energy applications require power components that safely deliver more power with greater efficiency. Designers prefer to use IGBTs or SiC FETs that achieve lower power loss at greater than 400V. Those devices also have standoff voltages up to 1,200 volts, and offer lower ON resistance than equivalent MOSFETs. They are often managed by a TI microcontroller or dedicated digital power controller, such as the UCD3138. Next-generation IGBT- and SiC FET-based designs also require both power and signal isolation from the noisy switching environment of the power stage.
The UCC27531 and UCC27532 prevent the digital controllers from operating too close to the power circuitry, extending the lifetime of isolated power designs. Features and benefits of the UCC27531: Strong output drive capability with peak current of 2.5 A source and 5 A sink allows fast charging of IGBTs and ensures reliable and efficient operation. Fast propagation time of 17 ns typical delay improves driver efficiency. UVLO settings and rail-to-rail output voltage provide system protection and can enhance reliability.
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These devices can handle noisy environments as a result of their negative input voltage handling which allows the driver to support many industrial designs. And the split-output configuration improves Miller turn-on immunity and prevents damage of IGBT/MOSFET and can provide improved system protection.
The new output stage drivers expand TI’s analog and digital controllers that drive IGBTs. Isolated gate drivers, such as the ISO5500, increase safety and system performance in high-current and high-voltage designs. The driver also provides proven reliability of SiO2 dielectric with stability over time, temperature and moisture. TI also has a large portfolio of single and dual 5-A high-speed, low-side power management gate drivers, such as the UCC2751x and UCC2752x families.
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The UCC27531 and UCC27532 gate drivers are available in a 6-pin, SOT-23 package and are priced at US$0.75 in quantities of 1,000. The UCC27531EVM-184 IGBT driver daughter card evaluation module is priced at US$49 and available for ordering through TI’s eStore. In addition, a PSpice model and application note 35-V single-channel gate drivers for IGBTs help speed design time.
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