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Transphorm to Rev High-Voltage GaN at APEC

February 22, 2017 by Power Pulse1595211359

Transphorm Inc. will highlight its comprehensive presence at the 2017 Applied Power Electronics Conference (APEC). Transphorm's intrinsic commitment to quality and reliability will be demonstrated in all event activities, from company and customer product showcases to educational presentations.

APEC attendees will learn how the company’s GaN material and device configuration lead to high voltage power system innovations and benchmark-setting efficiencies. Further, spokespeople will be available to explain the rigorous, extensive testing Transphorm conducts to ensure its FETs deliver the highest quality, reliability and lifetime performance possible today. Transphorm’s APEC initiatives will include:

Breaking News: An APEC-timed portfolio expansion announcement will mark yet another GaN industry milestone driven by Transphorm.

Customer Product Launch: Transphorm is honored to host a customer’s first public look at an innovative power supply design solution. This solution will enable engineers to develop GaN systems in an unprecedented manner, helping to bridge knowledge gaps as well as reduce design time.

Transphorm will present two sessions during APEC: How to Design with GaN in Under an Hour, by Philip Zuk, Sr. Director, Technical Marketing on Wednesday, March 29 at 10:30 a.m. – 11:00 a.m. in Room 21; and Preventing GaN Device VHF Oscillation Using a Drain Ferrite Bead, by Zan Huang, Director, Marketing & Field Apps., U.S. and Asia on Thursday, March 30 at 10:00 a.m. – 10:30 a.m. in Room 15/16.

Customer Displays: Transphorm customer solutions currently in production will be displayed, such as: The first ac-dc front-end switch-mode power supply implementing bridgeless totem-pole PFC topology and the first GaN-based redundant power supply demonstrating performance and size efficiencies outpacing those of incumbent tech.

Showcase: In addition to GaN in various packages, Transphorm will host static and live demonstrations of high voltage GaN system development and device innovations.