The team from Efficient Power Conversion (EPC) will be delivering seven technical presentations on gallium nitride (GaN) technology and applications at APEC 2017 in Tampa, Florida, from March 26th through the 30th. In addition, the company will feature its latest eGaN® FETs and ICs, as well as their customers' end products that are enabled by eGaN technology.
In the company’s booth, #530, demonstrations will include a single tabletop implementing a high-power resonant wireless charging solution capable of supporting a wide range of devices, including cell phones, notebook computer, monitor, and table lamps. In addition, a brushless dc precision motor drive, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles, a high-intensity LED truck headlight, and a showdown between the best-in-class silicon MOSFETs and the latest high performance 100/200 V eGaN FETs will be demonstrated.
These latest eGaN FETs cut the size of these demonstration devices in half while tripling performance. This virtuous cycle of smaller size, lower costs, and higher performance is expanding the gap in both performance and cost between eGaN FETs and ICs and the aging power MOSFET.
Technical Presentations Featuring GaN FETs and Integrated Circuits by EPC Experts:
“GaN Transistors for Efficient Power Conversion,†Alex Lidow; Wednesday, March 29 (11:15 a.m. – 11:45 a.m.; Exhibitor Session, Room 13)
“Evaluation of Gate Drive Overvoltage Management Methods for Enhancement Mode Gallium Nitride Transistors,†David Reusch, Michael de Rooij; Wednesday, March 29 (2:00 p.m. – 5:30 p.m.; Session T17)
“Re-Evaluating 48 Vin Server Architectures with High Performance GaN Transistors,†David Reusch; Wednesday, March 29 (2:00 p.m. – 5:30 p.m.; Session IS10)
“Moore’s Law is Alive with GaN,†Alex Lidow; Wednesday, March 29 (2:00 p.m. – 5:30 p.m.; Session IS09)
“Deadtime Losses in eGaN® FETs and Silicon MOSFETs – How Freedom from Reverse Recovery Can Cut Your Losses,†John Glaser; Thursday, March 30 (8:30 a.m. – 11:30 a.m.; Session IS13)
“Advancements in Reliability Evaluation of eGaN® FETs and ICs Demonstrates Readiness for Mainstream Adoption,†Chris Jakubiec; Thursday, March 30 (8:30 a.m. – 11:30 a.m.; Session IS13)
“Wireless Power Class E Using eGaN® FET and eGaN Gate Driver IC,†Yuanzhe Zhang; Thursday, March 24 (2:00 p.m. – 5:30 p.m.; Session IS19)
