New Industry Products

Vishay Debuts New PowerPAK Power MOSFETS

September 20, 2001 by Jeff Shepard

Vishay Intertechnology Inc. (Santa Clara, CA) announced a new series of higher-voltage n-channel power MOSFETs, the first in the PowerPAK SO-8 to be optimized for the primary side of dc-to-dc converters.

These PowerPAK devices feature a thinner profile than the standard SO-8 MOSFETs, as well as superior current and power dissipation capabilities. They will be used in isolated power supply dc-to-dc converters in 24V to 48V applications, including telecommunications, computer, automotive and military aviation products having higher supply voltages.

The new Si7450DP (200V), Si7846DP (150V), Si7454DP (100V), Si7852DP (80V) and Si7850DP (60V) can handle currents from 5.3A up to 12.5A, enabling higher power density designs. Minimizing switching losses, typical gate charge ratings for the new PowerPAK devices ranges from 18nC in the 60V Si7850DP to 34nC in the 200V Si7450DP. On-resistance values range from 22mOhm at a 10V gate drive in the Si7850DP 60V device to 80mOhm at a 10V gate drive in the 200V Si7450DP. Optimized for applications that require minimized conduction losses, the 100V Si7456DP offers an on-resistance of 25mOhm at a 10V gate drive, with low gate charge of 36nC.

Samples and production quantities of the Vishay Siliconix Si7450DP, Si7846DP, Si7456DP, Si7454DP, Si7852DP and Si7850DP are available now, with lead times of four to six weeks for larger orders.