Silicon Power Debuts MOSFET-Controlled Thyristor

Silicon Power Corp. (Exton, PA) announced its new family of MOSFET-controlled thyristors (MCTs) for pulse-power applications, which feature a 1,400V rating, high peak repetitive pulse capability and a low forward-voltage drop. An MCT rated for 65A continuous will handle repetitive peak currents of 6,000A.

The MCT device combines the low forward-voltage drop of thyristors with the control of MOSFETs, making it suitable for capacitive discharge circuits. The device is made using VLSI technology to closely integrate MOSFET control devices with current-carrying thyristor structures.

The MCT devices are available in a five-pin TO-247 package or in a lead-less ThinPak package. The ThinPak package consists of a bare, solderable die with a metallized ceramic lid, which allows for a high current connection to the top of the die using a thick copper strap. The ThinPak allows low inductance, high-current connections to be made to the circuit, takes up less space than any packaged device, and can be more closely attached to a heatsink.