International Rectifier Announces Production of TempSENSE HEXFET Power MOSFETs
International Rectifier (El Segundo, CA) have announced the production of their first TempSENSE HEXFET power MOSFET, which can provide cost-effective temperature sensing for automotive system protection by using an on-chip temperature sensing diode.
The IRLBD59N04E is a 40V, 20 mohms, N-channel MOSFET. Temperature sensing is provided by two anti-parallel, electrically isolated, poly-silicon diodes. The diode's forward voltage falls approximately 0.4V with a bias current of 250uA when the MOSFET reaches its maximum permitted temperature value.
The new device will meet the rigid Q101 automotive stress test qualification procedure at 175 degrees C when the devices are released into production in July 2000. The Q101 certification process is designed to ensure high-reliability component performance in harsh automotive environments. The 175-degree C temperature rating is necessary for engine compartment and other high-temperature applications. Thus, the IRLBD59N04E is well-suited for electric power-assist steering, anti-lock brakes and fuel-injection systems, as well as power door locks, window lifts and car audio circuits.
Samples are available immediately. Pricing is $0.80 in 10,000-unit quantities. Data sheets are available on the company's website with complete specifications.