New Industry Products

MOSFET Pairs Help Designers Achieve Highest Power Density and Efficiency

June 27, 2013 by Jeff Shepard

Alpha and Omega Semiconductor Limited (AOS) has released AON6970 and AON6978, high power density 30V PairFET devices, both in an asymmetric dual (high-side and low-side integrated MOSFETs) DFN5x6 package. The devices are designed for high-performance dc-dc solutions for networking point-of-load (POL) converters, servers, advanced notebooks, desktops, all-in-one PCs as well as isolated dc-dc converters in telecom and industrial applications.

Developed with the company’s AlphaMOS technology, the new PairFETs feature ultra-low Rds(on) and gate charge to operate at a higher switching frequency -- producing highly-efficient solutions in a compact DFN5x6 package. The PairFET's asymmetric configuration improves performance by allowing the size of the low-side MOSFET to be increased for lowest conduction loss. The combination of AlphaMOS low-voltage technology and the effective package configuration of the PairFET devices allow the AON6970 to offer on-resistance as low as 2.3mO max at Vgs=4.5V on the low side.

"AOS's new PairFET MOSFETs help simplify power designs and save space in high-efficiency synchronous buck single- and multi-phase dc-dc converters by providing an optimized combination of high-side and low-side MOSFETs in a single compact package," said Yalcin Bulut, Vice President of Discrete Product Lines at AOS.

Specifications for the AON6970 high-side switch include: VGS +/-20V; Rds(on) of 5.4milliohms at 10V and Rds(on) of 8.5 milliohms at 4.5V; Qg (typical) of 8 nC; and ID of 58A at 25 degrees C and 36A at 100 degrees C. Specifications for the AON6970 low-side switch include: VGS +/- 20V; Rds(on) of 1.5 miliohms at 10V and Rds(on) of 2.3 milliohms at 4.5V; Gq (typical) of 27 nC; and ID of 85A at 25 degrees C and 66A at 100 degrees C.

Specifications for the AON6978 high-side switch include: VGS +/-20V; Rds(on) of 5.7milliohms at 10V and Rds(on) of 9.4 milliohms at 4.5V; Qg (typical) of 6.8 nC; and ID of 28A at 25 degrees C and 22A at 100 degrees C. Specifications for the AON6978 low-side switch include: VGS +/-12V; Rds(on) of 3.8milliohms at 10V and Rds(on) of 4.9 milliohms at 4.5V; Qg (typical) of 20.6 nC; and ID of 36A at 25 degrees C and 28A at 100 degrees C.

The AON6970 and AON6978 devices are 100% Rg and UIS tested, and are RoHS and Halogen-Free compliant. The AON6970 and AON6978 are immediately available in production quantities with a lead-time of 12-14 weeks. The unit price for 1,000 pieces is $1.20 and $0.63, respectively.